Samsung and Micron prep advanced HBM3E 3D chips for memory-intensive applications
Vertical DRAM density can be increased by 20 percent compared to HBM3E 8H chips. Improvements in manufacturing also provide better thermal properties and a higher product yield, we’re told. Looking ahead, Micron is preparing to sample its first 36GB 12-High HBM3E chips in March. Featured on TechSpot